The program simulates the growth process of anodic oxide when exposed to a conducting probe of an atomic force microscope (AFM).
Over the past years, a large number of studies have been devoted to the formation of the topology of nanometer dimensions using scanning probe microscopes, including methods of local etching, oxidation and deposition of metals and semiconductors with a resolution of about 10 nm.
This paper is devoted to modeling and studying the process of anodic probe oxidation of Ti films. Despite intensive studies of this process, there is still no consensus on the mechanism of oxide growth.
The proposed mathematical model is well adapted to the numerical method for calculating the oxide growth process.
Note: model and program were created in 1999. The program is ported to IDE Lazarus in 2015.